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MPX5010DP IC Integrated Silicon Pressure Sensor On Chip Signal Conditioned

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MPX5010DP IC Integrated Silicon Pressure Sensor On Chip Signal Conditioned

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Model Number : MPX5010DP

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 4200pcs

Delivery Time : 1 day

Packaging Details : Please conatct me for details

Description : Pressure Sensor 1.45PSI (10kPa) Differential Male - 0.19" (4.93mm) Tube, Dual 0.2 V ~ 4.7 V 6-SIP Module

Pressure Range : 0 to 10 kPa

Supply Voltage : 5.0 Vdc

Supply Current : 5.0 mAdc

Sensitivity : 450 mV/kPa

Response Time : 1.0 ms

Warm-Up Time : 20 ms

Weight, Basic Element (Case 867) : 4.0 grams

Weight, Basic Element (Case 482) : 1.5 grams

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MPX5010 MPXV5010G SERIES

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

INTEGRATED PRESSURE SENSOR

0 to 10 kPa (0 to 1.45 psi)

0.2 to 4.7 V OUTPUT

The MPX5010/MPXV5010G series piezoresistive transducers are state-ofthe-art monolithic silicon pressure sensors designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure.

Features

  • 5.0% Maximum Error over 0° to 85°C
  • Ideally Suited for Microprocessor or Microcontroller-Based Systems
  • Durable Epoxy Unibody and Thermoplastic (PPS) Surface Mount Package
  • Temperature Compensated over -40° to +125°C
  • Patented Silicon Shear Stress Strain Gauge
  • Available in Differential and Gauge Configurations
  • Available in Surface Mount (SMT) or Through-hole (DIP) Configurations

Application Examples

  • Hospital Beds
  • HVAC
  • Respiratory Systems
  • Process Control

Maximum Ratings(1)

Rating Symbol Value Unit
Maximum Pressure (P1 > P2) Pmax 75 kPa
Storage Temperature Tstg -40 to +125 °C
Operating Temperature TA -40 to +125 °C

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

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